Question

高分急求！微电子专业英语翻译！！

单词：POLY
METAL
THIN OXIDE
PWELL CHANNEL
NEPI DRAIN N SOURCE
句子：
Figure 1.17 A double diffused DOMOS transistor is fabricated by diffusing first a p-well into the n-type epi through a hole in the polysilicon.A second n-type diffusion forms the source.The epi acts as drain and the channel forms in the p-well.Channel length depends on lateral diffusion of the p-well and the n-type source.
source.The drain contact is made to be epi.Arrays of these devices result in efficient layouts for power transistors.
Zener Diodes
Pn junctions operating in breakdown are used as voltage references and in clipping and clamping circuits. The breakdown voltage varies inversely with the square root of the doping in the lightly doped side of the junction,as described in Equation 1.26.If a zener is to survive breakdown ,it is important that the current be distributed across the cross-sectional area of the junction.Doping and electric field nonuniformity results in breakdown occurring first where the doping and the electric field are largest.The deep buried layer iso zener,shownin Figure 1.18,has a smooth cross-sectional area with uniform distribution of dopants.Currents tend to be distributed over a larger area than in the surface,shallow-n shallow-p zener shown in Figure1.18,where doping varies with distance form the surface and has sharp corners where the electric field is larg.These zeners are destroyed by large currents.They fail at coners near the surface. If the current is limited by external circuits so that power dissipation in the junction is maintained within safe limits,the junction is not damaged.Pn junctions operated in reverse breakdown are called "zener diodes"and are used as voltage references or in clippin and clamping circuits for protection of sensitive structures.
多谢！！！急求！！！

Answer 1

单词：POLY 多
METAL 金属
THIN OXIDE 薄氧化物
PWELL CHANNEL PWELL(P阱)沟道
NEPI DRAIN N SOURCE NEPI漏极N源极

句子：
图 1.17 一个双扩散DOMOS晶体管的制备，先通过多晶硅里的一个洞在n型epi里扩散出一个p阱。第二次n型扩散形成了源极。漏极就是原来的epi，而p阱形成了沟道。沟道长度取决于p阱和n型源极的横向扩散。epi做成了漏极接触。多个这样的器件排成阵列可以做成高效的电力晶体管。

齐纳二极管
pn结操作于击穿状态用来作电压参照或削波和箝位电路。 击穿电压随结的较轻掺杂一侧的掺杂浓度平方根变化，如方程1.26所描述。要想让齐纳管被击穿时不损坏，至关重要的是电流必须分布在结的整个截面积上。掺杂和电场的不均匀性导致击穿首先在掺杂浓度最高或电场最大的地方。如图1.18所示，深层iso齐纳管有一个光滑截面积及均匀分布的掺杂物。与图1.18的表面浅n浅p型齐纳管相比电流分布于更大的面积，后者的掺杂浓度随离表面的距离变化而且在其尖角处有大电场。这些齐纳管会被大电流烧坏。损坏处就是靠近表面的尖角处。如果电流由外部电路限制使得结内能量耗散保持在安全范围以内，结就不会烧坏。操作于反向击穿状态下的pn结叫齐纳二极管，用作电压参照或保护敏感元件的削波和箝位电路。