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4.3.ChemistryofTypeIISphaseItiscommonlyacceptedthattherearethreewaystoformanSphase:by...
4.3. Chemistry of Type II S phase
It is commonly accepted that there are three ways to
form an S phase: by heterogeneous nucleation from
vacancy loops, by heterogeneous nucleation on dislocations, and by transformation of or nucleation on the intermediate precipitateS00.Siinhibits the formation of vacancy
loops during/after quenching, and therefore suppresses the
availability of heterogeneous nucleation sites [29].
In their study of a quenched and aged Al–2.96 Mg–0.42
Cu–0.12 Si–0.25 Mn–0.21 Fe alloy using EDS and 3DAP,
Kovarik et al. [24] showedthat about1wt.%( at.%) of Si
concentrates at or close to the interface of Type IIS phase
(which they termedtheprecipitateS00 phase) and Al matrix.
Accordingly, Kovarik et al. [24] proposed that Si might
promote the formation of Type II S phase precipitates in
their alloy. However, the EDS analysis in the present
AA2x24 alloys did not show any Si enrichment in or
around the Type II precipitates, for example in the
AA2324 alloy, as shown in Fig. 3d. In comparison with
the DSC peaks(CII)for the formation of Type II precipitates in the AA2024 alloy with 0.49 wt.% Si and in the
AA2324 alloy with 0.08 wt.% Si(Fig.5), theCII peak of
AA2024 is lower than the corresponding CII peak of
AA2324 alloy. This means that the high level of Si does
not promote the formation of Type II phase precipitates
in AA2x24 alloys. Instead it promotes formation of Type
I S phase. 展开
It is commonly accepted that there are three ways to
form an S phase: by heterogeneous nucleation from
vacancy loops, by heterogeneous nucleation on dislocations, and by transformation of or nucleation on the intermediate precipitateS00.Siinhibits the formation of vacancy
loops during/after quenching, and therefore suppresses the
availability of heterogeneous nucleation sites [29].
In their study of a quenched and aged Al–2.96 Mg–0.42
Cu–0.12 Si–0.25 Mn–0.21 Fe alloy using EDS and 3DAP,
Kovarik et al. [24] showedthat about1wt.%( at.%) of Si
concentrates at or close to the interface of Type IIS phase
(which they termedtheprecipitateS00 phase) and Al matrix.
Accordingly, Kovarik et al. [24] proposed that Si might
promote the formation of Type II S phase precipitates in
their alloy. However, the EDS analysis in the present
AA2x24 alloys did not show any Si enrichment in or
around the Type II precipitates, for example in the
AA2324 alloy, as shown in Fig. 3d. In comparison with
the DSC peaks(CII)for the formation of Type II precipitates in the AA2024 alloy with 0.49 wt.% Si and in the
AA2324 alloy with 0.08 wt.% Si(Fig.5), theCII peak of
AA2024 is lower than the corresponding CII peak of
AA2324 alloy. This means that the high level of Si does
not promote the formation of Type II phase precipitates
in AA2x24 alloys. Instead it promotes formation of Type
I S phase. 展开
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4.3 . 化学类S期,大家普遍认为,有三种方式,形成一个S期: 均相成核,由出缺环路,均相成核脱位 并通过变换或核的中间precipitates00.siinhibits形成环路出缺期间/淬火后, 因此,打压供货均相成核位[29] . 他们研究了淬火和年龄铝-镁2.96 - 0.42铜0.12矽锰0.25 - 0.21铁合金用EDS和3dap , 科瓦里克】. [24] showedthat about1wt . % (原子% )硅精矿或接近的接口类型相入境(它们termedtheprecipitates00 相)和铝基材. 因此,科瓦里克】. 〔24〕建议,硅,可促进细胞形成的II型S期析出的合金. 然而, 的EDS分析,在目前的aa2x24合金,并没有出现任何硅富集左右的II型 沉淀物,例如在aa2324合金,如图. 三维. 相比之下用DSC峰(联合会)的形成II型沉淀在aa2024合金0.49 88.1% . 成思 在aa2324合金0.08 88.1% . 成思( qNs的) , thecii高峰aa2024低于相应的共振峰aa2324合金. 这意味着高硅不利于形成II型相析出aa2x24 合金. 反而有助促进形成I型S期.
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