Question

高手帮忙翻译一下 急 谢谢 不要在线翻译那种 ！！！ 一点不通

有一篇英文论文
Two major assumptions limit the generality of the string algorithm in ELITE. First, the pattern to be etched is uniform in one
dimension, so the problem can be solved using only two dimensions. For most microfabrication problems, the important cases involve the cross-sections of lines, so this model is directly applicable. In certain other cases, such as round holes, the symmetry of some cross-sections is such that the algorithm is still valid. The second major assumption is that the etch rate is a scalar function of position, and is independent of the direction of local etch front motion and the history of the front. In some real situations, this does not hold. PMMA, for instance, has been found to have a gel region at the resist-solvent interface during development, so the etch rate is a function of the history of the adjacent regions as well as of the exposure. Another case where the second assumption does not hold is in the so-called “preferential etching” where etching proceeds more quickly along certain
crystal directions, making the etch anisotropic.
The algorithm described here is known as a “string algorithm” [83]. The etch front is simulated by a
series of points joined by straight line segments, forming a string. During each time increment, each
point advances perpendicularly to the local etch front as in Figure 4-1. A major portion of the
algorithm adjusts the number of segments to keep them approximately equal in length. Other
subroutines input the data and output the etch front.
Choosing suitable criteria for segment length was a major problem in developing the algorithm. It
seemed that segments must be short enough so that any curve that developed would be well defined,
i.e., there should be some maximum angle between adjacent segments, perhaps 0.1 radians. This
criterion, however, led to a proliferation of segments in regions where the front was either expanding
or contracting. The algorithms in ELITE attempt to maintain approximately equal segment lengths.
This results in position errors of about one-half segment length. The error can be reduced by
decreasing the average segment length with a proportional increase in computation time.
太乱了 只要翻译第一段就好 从Two major assumptions到 making the etch anisotropic

Answer 1

两个主要的假设限制的一般性的字符串算法的精英。首先，该模式将铭刻在一个统一
层面，因此可以解决问题只用两个层面。对于大多数微细的问题，重要案件涉及截面线，因此该模型是直接适用。在其他一些情况下，如圆孔，对称性的一些横截面是这样，该算法仍然有效。第二个主要的假设是，蚀刻率是一个标量函数的立场，是独立的方向当地蚀刻前议案和历史的前端。在一些实际情况，这并不搁置。聚甲基丙烯酸甲酯，例如，已经发现有凝胶地区在抵制溶剂界面开发过程中，因此蚀刻率职能之一，是历史上的邻近地区以及暴露。另一种情况下，第二个假设并没有在所谓的“优惠侵蚀”而蚀刻收益更迅速地沿着一定的
晶体方向，使蚀刻各向异性。
这里描述的算法被称为“字符串算法” [ 83 ] 。刻蚀前的模拟
一系列的点加入的直线部分，形成一个字符串。在每次递增，每个
点进步的地方垂直蚀刻阵线在图4-1 。大部分
算法调整的若干部分，以使他们在长度大致相等。其他
子程序的数据输入和输出的蚀刻阵线。
选择合适的标准，部分长度是一个重要问题是发展中国家的算法。它
看来，部分必须太长，从而使任何曲线，发达国家将是很好的界定，
也就是说，应该有一些最大角相邻部分，也许0.1弧度。这个
标准，但是，导致了扩散的部分地区，前面是不是扩大
或订约。该算法精英试图保持大致相同的部分的长度。
这样的结果是位置误差约半部分的长度。错误可以减少
降低部分的平均长度的比例增加了计算时间