Question

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The PbSe system is another important example where
enhancing the thermoelectric performance via matrix/inclusion
band alignment can be accomplished. In this case the band
energy offsets between the PbSe matrix and the nanostructured
phases can be reduced using compositionally alloyed
CdS1xSex/ZnS1xSe nanostructures.16 As shown in Fig. 10(a), an
increase in the second phase fraction results in only small
changes in carrier mobilities for the PbSe–(CdS/ZnS). In
contrast, a decreasing trend is observed for the CdSe/ZnSe
containing samples. It is believed that the variations in carrier
mobility are associated with valence band offsets between the
host PbSe matrix and the nanostructured second phase precipitates.
Density functional theory (DFT) calculations of band
alignment show that relative to PbSe, the valence band energy
differences are 0.06 eV, 0.27 eV, 0.13 eV and 0.30 eV for CdSe,
CdS, ZnSe and ZnS,16 respectively, as shown in Fig. 10(b). The
reduced hole mobility for CdSe/ZnSe samples indicates relatively
strong scattering of holes across the (CdSe/ZnSe)/PbSe interfaces,
whose valence band energy offsets are relatively large. Clearly the
band offsets between perfectly ordered, stoichiometric phases
are not sufficient to explain the small changes in the carrier
mobilities for the PbSe–(CdS/ZnS).

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Answer 1

硒化铅系统是另一个重要的例子
提高热电性能通过基体/夹杂
带定位可以完成。在这种情况下，乐队
硒化铅矩阵和纳米结构之间的能量偏移
阶段可以使用成分合金降低
CDS1 材料/氧硫化 XSE nanostructures.16如图10（a），一个
在第二阶段的部分结果只有很小的增加
在对PbSe–载流子迁移率的变化（CdS / ZnS）。在
相反，一个下降的趋势是观察到的CdSe /硒化锌
含样品。相信在载体的变化
流动性与价带偏移量之间的关联
主机的PbSe矩阵和纳米第二相析出物。
密度泛函理论（DFT）计算的能带
比对表明，相对于硒化铅，价带的能量
差异是0.06电子伏特，0.27伏特，0.13 eV和0.30 eV的CdSe，
CdS，ZnS、ZnSe，分别为16，如图10（b）。的
的CdSe / ZnSe样品表明相对减少空穴迁移率
孔在强散射（CdSe／ZnSe）/硒化铅接口，
的价带能量偏移量是比较大的。清楚的
带偏移之间的完全有序的，化学计量相
都不足以解释在载体的小的变化
对PbSe–迁移率（CdS / ZnS）。
双语对照

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