Question

急急急！有人工翻译的么？

0.91 eV, 1.09 eV and 1.21 eV for CdS, ZnS, CaS and SrS, respectively, Fig. 11(b). These energy offsets are very large and well exceed the magnitude of thermal energy even at elevated
temperatures thereby resulting in strong scattering of conduction electrons.15,54 For the p-type PbS system, the situation is very different and far more interesting. The hole mobilities of the CdS containing
samples are the highest, Fig. 11(a). Namely, the room temperature carrier mobility is 148 cm2 V1 s1 for the Pb0.975Na0.025S–3.0% CdS sample, much higher than 118 cm2 V1 s1, 115 cm2 V1 s1, and 111 cm2 V1 s1 for 3.0% ZnS, 3.0% CaS, and 3.0% SrS containing samples (with a similar carrier concentration of 4.78  1019 cm3), respectively. The CdS nanocrystals in the PbS matrix do not appear to signifi-
cantly affect the hole scattering. The better alignment of energies of the valence band maxima between PbS and CdS (in the NaCl structure) can account for this. The electronic band structure calculations for PbS and the metal sulfides indicate valence band maxima (VBM) energy differences (with respect to the VBM of PbS) of 0.13 eV, 0.16 eV, 0.53 eV and 0.63 eV for CdS, ZnS, CaS and SrS respectively,15,54
see Fig. 11(b). The minimum band offset is about 0.13 eV with the valence band maximum of PbS lying higher than that of CdS. The energy difference is even greater with the other metal
sulfides.

Answer 1

0.91 eV,1.09 eV和1.21 eV cd、硫化锌、中科院和SrS,分别是图11(b)。这些能量偏移量非常大,远远超过级热能即使在升高
温度从而导致强烈的传导电子的散射。15日,54岁的p型公共广播系统,情况有很大的不同和有趣得多。cd包含的洞的机动性
样品是最高的,图11(a)。即室温载流子迁移率是148 cm2 V1 s1的cd样本pb0.975na0.025s - 3.0%,远高于118 cm2 V1 s1,115 cm2 V1 s1,和111 cm2 V1 s1的硫化锌为3.0%,中科院的3.0%,和3.0% SrS包含样本(类似的载体浓度为4.78 1019立方厘米),分别为。CdS纳米晶体在PbS矩阵不明显
不能影响孔散射。价带的更好的对齐能量最大值之间PbS和cd(氯化钠结构)可以为这个帐户。电子能带结构计算PbS和金属硫化物表明价带最大值(VBM)能量差异(对VBM PbS)0.13 eV,0.16 eV,0.53 eV和0.63 eV cd、硫化锌、中科院和SrS 54
参见图11(b)。最低带偏移量与价带约0.13 eV最多PbS躺高于cd。能量的区别是更大的和其他金属
硫化物。

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15日,54岁的p型公共广播系统。兄弟你这翻译不够专业啊

Answer 2

对于 CdS, ZnS, CaS 和SrS来说分别为 0.91eV，1.09 eV和1.21 eV，如图11（b）所示。这些能量偏移量非常大而且甚至在高温下大大超过热能的大小，从而导致传导电子很强的分散。[15,54] 对于p型PbS系统来说，情况大大不同，而且更有趣。含CdS样品的空穴迁移率是最高的，见图11（a）。即，Pb0.975Na0.025S–3.0% CdS样品的室温载流子迁移率为148 cm2 V 1 s 1，远高于含3.0％ZnS，3.0%CaS和3.0%SrS样品（具有类似的载流子浓度4.78？1019cm？3）的118 cm2 V 1 s 1,115 cm2 V 1 s 1, 和111 cm2 V 1 s 1。在PbS基体中的CdS纳米晶体似乎并没有显著影响空穴分散。更好地对准PbS和CdS（在NaCl结构中）之间价带最大值的能量可以证明这点。PbS和金属硫化物的电子能带结构计算表明，对于CdS, ZnS, CaS 和 SrS来说，价带最大值（VBM）的能量差（相对于PbS的VBM）分别为0.13eV，0.16eV，0.53 eV和0.63 eV[15,54], 见图11（b）。在PbS的VBM高于CdS的VBM时，最小带偏移大约为0.13eV。能量差就其它金属硫化物来说甚至更大。