Question

急急急，，哪位大神帮我翻译一下这段话！！！

稀磁半导体材料的特点在于存在有磁极子的局域磁矩与载流子的相互作用，从而产生出许多新的性质和新的效应。它的磁输运特性有如：①存在有奇异的Hall效应（即Hall系数与磁场的关系类似于一般的磁化曲线，这是由于载流子与磁性Mn原子之间的各向异性散射所致）；②存在有非金属-金属-非金属转变（Mn含量较低时呈现非金属行为，Mn含量较高时呈现金属行为，当Mn含量更高时又呈现非金属行为）；③具有很大的负磁阻效应；④在磁/半导体层异质结中具有自旋共振隧穿效应，即能引起大的隧穿磁电阻（TMR）——变化大、无方向性、为负值；⑤具有层间磁耦合作用，对于 [磁半导体层/ 非磁半导体层 /磁半导体层] 结构，观察到了磁半导体层之间的铁磁耦合和自旋散射与自旋隧穿所引起的磁阻效应。

Answer 1

The characteristics of the dilute magnetic semiconductor materials is the son of the local magnetic moment are poles and carrier interaction, thus produce many new properties and new effects. Its magnetic transport characteristics are: (1) there is a strange Hall effect (namely the Hall coefficient and the relationship of the magnetic field is similar to general of magnetization curve, this is due to the carrier and the magnetic anisotropic scattering caused by Mn between atoms); Non-metallic metal - (2) there are non-metallic shift (nonmetal behavior appears when Mn content is low, metal behavior appears when Mn content is higher, when Mn content is higher and render non-metallic behavior). (3) has a great deal of negative magnetoresistance effect; (4) in the magnetic layer/semiconductor heterojunction with spin resonance tunneling effect, which can cause large tunneling magnetoresistance (TMR) - change is big, omnidirectional。

Answer 2

The characteristics of the dilute magnetic semiconductor materials is the son of the local magnetic moment are poles and carrier interaction, thus produce many new properties and new effects.

Its magnetic transport characteristics are: (1) there is a strange Hall effect (namely the Hall coefficient and the relationship of the magnetic field is similar to general of magnetization curve, this is due to the carrier and the magnetic anisotropic scattering caused by Mn between atoms);

Non-metallic metal - (2) there are non-metallic shift (nonmetal behavior appears when Mn content is low, metal behavior appears when Mn content is higher, when Mn content is higher and render non-metallic behavior).

(3) has a great deal of negative magnetoresistance effect;

(4) in the magnetic layer/semiconductor heterojunction with spin resonance tunneling effect, which can cause large tunneling magnetoresistance (TMR) - change is big, omnidirectional, negative;

(5) has the magnetic coupling effect between layers, for [magnetic semiconductor layer/non magnetic semiconductor/magnetic semiconductor layer] structure, observed the ferromagnetic coupling between magnetic semiconductor layer and scatter and spin spin magnetic resistance caused by tunneling effect.

Answer 3

加到200分也许我们会考虑做一下。。。