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AbstractApolishedceramicsubstrateisprovidedwithaninsulationlayerofsiliconmonoxide(SiO...
Abstract
A polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO), over which a nickel metal thin-film is laid down in a spiral or serpentine pattern, taking up a desirably small area, but at the same time giving a high electrical resistance. Finally, a cover or protective layer of silicon monoxide is then deposited over the resistor, serving to protect it from the possibility of outside contamination.
1. A deposited thin-film resistance temperature sensor, comprising:
a high-density alumina substrate having a flat polished surface; a first silicon monoxide layer vapor deposited onto said substrate flat polished surface; a sinuous length of evaporated nickel film deposited onto said first silicon monoxide layer; first and second connector pads deposited onto said nickel film spaced from one another along the nickel film that amount necessary to define a predetermined magnitude of electrical resistance for said nickel film; first and second gold leads respectively resistance welded to said first and second connector pads; and a second silicon monoxide layer vapor deposited over said nickel film and said connector pads leaving outer end portions of said gold leads exposed.
2. A deposited thin-film temperature sensor as in claim 1, in which the nickel film is annealed at approximately 805.degree. F. to stabilize film resistance.
3. A method of making a thin-film temperature sensing device, comprising:
forming a flat polished surface on a high-density alumina substrate; vapor depositing a film of silicon monoxide onto the flat polished surface of the substrate; vapor depositing a spiral-shaped metallic nickel film onto the silicon monoxide film; vapor depositing metallic connection pads onto said nickel film; heating the substrate with silicon monoxide and metallic nickel films thereon to a temperature of 805.degree. F. (429.degree. C.) in a low gas pressure environment to effect stabilization of the nickel film grain structure and resistance value; resistance welding a gold lead to each connection pad; vapor depositing a silicon monoxide film over the nickel film and connection pads; and heating the assembly to 400.degree. F. (204.degree. C.) for approximately 48 hours to stabilize the resistance of the nickel film. 展开
A polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO), over which a nickel metal thin-film is laid down in a spiral or serpentine pattern, taking up a desirably small area, but at the same time giving a high electrical resistance. Finally, a cover or protective layer of silicon monoxide is then deposited over the resistor, serving to protect it from the possibility of outside contamination.
1. A deposited thin-film resistance temperature sensor, comprising:
a high-density alumina substrate having a flat polished surface; a first silicon monoxide layer vapor deposited onto said substrate flat polished surface; a sinuous length of evaporated nickel film deposited onto said first silicon monoxide layer; first and second connector pads deposited onto said nickel film spaced from one another along the nickel film that amount necessary to define a predetermined magnitude of electrical resistance for said nickel film; first and second gold leads respectively resistance welded to said first and second connector pads; and a second silicon monoxide layer vapor deposited over said nickel film and said connector pads leaving outer end portions of said gold leads exposed.
2. A deposited thin-film temperature sensor as in claim 1, in which the nickel film is annealed at approximately 805.degree. F. to stabilize film resistance.
3. A method of making a thin-film temperature sensing device, comprising:
forming a flat polished surface on a high-density alumina substrate; vapor depositing a film of silicon monoxide onto the flat polished surface of the substrate; vapor depositing a spiral-shaped metallic nickel film onto the silicon monoxide film; vapor depositing metallic connection pads onto said nickel film; heating the substrate with silicon monoxide and metallic nickel films thereon to a temperature of 805.degree. F. (429.degree. C.) in a low gas pressure environment to effect stabilization of the nickel film grain structure and resistance value; resistance welding a gold lead to each connection pad; vapor depositing a silicon monoxide film over the nickel film and connection pads; and heating the assembly to 400.degree. F. (204.degree. C.) for approximately 48 hours to stabilize the resistance of the nickel film. 展开
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