Question

电气英语翻译

The majority of PV solar cells are made from crystalline silicon, either single crystal or multi-crystalline silicon. This account for around 90% of the current production. The remainder comprises various forms of thin film solar cells where the absorber material is deposited onto a suitable substrate such as glass. The absorber materials for thin film cells are either amorphous/polycrystalline silicon or compound semiconductors such as cadmium telluride, gallium arsenide, copper indium diselenide etc. Organic solar cells in the form of either dye sensitized solar cells or polymer absorbers are a newer low cost PV option that until recently has been confined to the laboratory but a recent investment by G24i in Wales is set to produce large volumes of flexible, dye sensitized, solar cells for niche applications.
The common characteristic to all the inorganic absorber materials is that they are semiconductors where absorption of light results in excitation band as illustrated in Fig. 1.
Unfortunately, not all the light can be absorbed in this way as the low energy photons, corresponding to the longer wavelengths of solar radiation will be insufficient to excite an electron hole pair. Selecting a very narrow band gap semiconductor absorber will result in more photons being absorbed but less voltage being produced. To achieve maximum power there is a compromise between the current (photons absorbed) and the voltage of the cell. This will result in a predicted optimum band gap for the absorber of around 1.3 eV and a maximum theoretical efficiency under normal terrestrial solar light of around 30%[1-3]. Unfortunately this is only part of the process as the electrons excited into the conduction band in p-type semiconductors are unstable and will tend to recombine, releasing heat. A junction is needed to draw the photo-generated electrons into n-type material where they are stable and extract an electric current via an external circuit. The n-type side of the junction can be made of the same material or a different semiconductor material to the absorber.
The dominance of the PV solar market by silicon is partly historical but is also a result of the development of silicon for the electronics industry. PV solar energy has been able to ride on the back of the developments in electronics until recently when more high purity silicon was being produced for PV solar than for electronics. However, the absorption coefficient of silicon is poor ,because it is not a direct band gap semiconductor, which is why direct band gap compound semiconductors have been developed gap compound semiconductors have been developed for the thin film applications. In reality this means that crystalline silicon cells require approximately 200 m, whereas direct.. Band gap semiconductors require only 1-2 m thickness of absorber. Thia factor will be discussed later in the context of cost of PV solar modules.

Answer 1

大多数的光伏太阳能电池是由晶体硅,要么单晶或multi-crystalline硅。此帐号的大约90%的当前的生产。其余包括各种形式的薄膜太阳能电池的电磁波吸收材料的地方沉积到一个合适的基质的玻璃。吸收塔材料都是细胞薄膜非晶/多晶硅或化合物半导体如镉telluride,diselenide铟镓、铜等。有机太阳能电池在形式的或者染料太阳能电池或高分子器时是一种新的低成本光伏的选项,直到最近,不仅仅限于实验室但最近在威尔士g24投资将产生大量的灵活、染料增为特定领域的太阳能电池。

共同特征的无机吸收材料的地方,他们是半导体光的吸收了结果在励磁乐队在图1。

不幸的是,并不是所有的灯能全神贯注,因为那样低能量的光子,对应于更长的波长的太阳辐射不足使电子孔的一对。选择一个非常狭窄的带隙半导体吸收,将导致更多的光子吸收后产生电压却越来越少。达到最大的可能是目前之间的一种折衷光子吸收)和电压的细胞。这将导致预测吸收过程的优化带隙大约13电动汽车,最高理论效率在正常陆地太阳光大约30%的[1 - 3]。不幸的是这只是冰山过程为电子兴奋到导带在p型半导体是不稳定的,就有可能重组,释放热量。一个连接是需要画出photo-generated电子束射入n型资料,在那里他们是稳定的,提取电流通过外部电路。该交接处的边的n型可由同一材料或者接受了一个不同的半导体材料到吸收器。

太阳能光伏主导市场研究历史也部分原因是由于硅晶片的技术发展为电子工业。光伏太阳能已能骑后面的发展电子直到最近当更多的高纯硅被制作太阳能光伏比电子产品。然而,硅的吸收系数差,因为这不是直接带隙半导体、这就是为什么直接带隙复合半导体已经发展差距复合半导体已经制定的薄膜的应用。事实上这意味着结晶矽电池大约需要200米,而直接。带隙半导体只需要1 - 2米避振器的厚度。这个盒子和那个因素将在后面讨论下的PV太阳能电池组件成本。

Answer 2

The majority of PV solar cells are made from crystalline silicon, either single crystal or multi-crystalline silicon. This account for around 90% of the current production. The remainder comprises various forms of thin film solar cells where the absorber material is deposited onto a suitable substrate such as glass. The absorber materials for thin film cells are either amorphous/polycrystalline silicon or compound semiconductors such as cadmium telluride, gallium arsenide, copper indium diselenide etc. Organic solar cells in the form of either dye sensitized solar cells or polymer absorbers are a newer low cost PV option that until recently has been confined to the laboratory but a recent investment by G24i in Wales is set to produce large volumes of flexible, dye sensitized, solar cells for niche applications.
The common characteristic to all the inorganic absorber materials is that they are semiconductors where absorption of light results in excitation band as illustrated in Fig. 1.
Unfortunately, not all the light can be absorbed in this way as the low energy photons, corresponding to the longer wavelengths of solar radiation will be insufficient to excite an electron hole pair. Selecting a very narrow band gap semiconductor absorber will result in more photons being absorbed but less voltage being produced. To achieve maximum power there is a compromise between the current (photons absorbed) and the voltage of the cell. This will result in a predicted optimum band gap for the absorber of around 1.3 eV and a maximum theoretical efficiency under normal terrestrial solar light of around 30%[1-3]. Unfortunately this is only part of the process as the electrons excited into the conduction band in p-type semiconductors are unstable and will tend to recombine, releasing heat. A junction is needed to draw the photo-generated electrons into n-type material where they are stable and extract an electric current via an external circuit. The n-type side of the junction can be made of the same material or a different semiconductor material to the absorber.
The dominance of the PV solar market by silicon is partly historical but is also a result of the development of silicon for the electronics industry. PV solar energy has been able to ride on the back of the developments in electronics until recently when more high purity silicon was being produced for PV solar than for electronics. However, the absorption coefficient of silicon is poor ,because it is not a direct band gap semiconductor, which is why direct band gap compound semiconductors have been developed gap compound semiconductors have been developed for the thin film applications. In reality this means that crystalline silicon cells require approximately 200 m, whereas direct.. Band gap semiconductors require only 1-2 m thickness of absorber. Thia factor will be discussed later in the context of cost of PV solar modules.
大多数的光伏太阳能电池是由晶体硅,要么单晶或multi-crystalline硅。此帐号的大约90%的当前的生产。其余包括各种形式的薄膜太阳能电池的电磁波吸收材料的地方沉积到一个合适的基质的玻璃。吸收塔材料都是细胞薄膜非晶/多晶硅或化合物半导体如镉telluride,diselenide铟镓、铜等。有机太阳能电池在形式的或者染料太阳能电池或高分子器时是一种新的低成本光伏的选项,直到最近,不仅仅限于实验室但最近在威尔士g24投资将产生大量的灵活、染料增为特定领域的太阳能电池。

共同特征的无机吸收材料的地方,他们是半导体光的吸收了结果在励磁乐队在图1。

不幸的是,并不是所有的灯能全神贯注,因为那样低能量的光子,对应于更长的波长的太阳辐射不足使电子孔的一对。选择一个非常狭窄的带隙半导体吸收,将导致更多的光子吸收后产生电压却越来越少。达到最大的可能是目前之间的一种折衷光子吸收)和电压的细胞。这将导致预测吸收过程的优化带隙大约13电动汽车,最高理论效率在正常陆地太阳光大约30%的[1 - 3]。不幸的是这只是冰山过程为电子兴奋到导带在p型半导体是不稳定的,就有可能重组,释放热量。一个连接是需要画出photo-generated电子束射入n型资料,在那里他们是稳定的,提取电流通过外部电路。该交接处的边的n型可由同一材料或者接受了一个不同的半导体材料到吸收器。

太阳能光伏主导市场研究历史也部分原因是由于硅晶片的技术发展为电子工业。光伏太阳能已能骑后面的发展电子直到最近当更多的高纯硅被制作太阳能光伏比电子产品。然而,硅的吸收系数差,因为这不是直接带隙半导体、这就是为什么直接带隙复合半导体已经发展差距复合半导体已经制定的薄膜的应用。事实上这意味着结晶矽电池大约需要200米,而直接。带隙半导体只需要1 - 2米避振器的厚度。这个盒子和那个因素将在后面讨论下的PV太阳能电池组件成本。