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Amodelingoftheopticalpropertiesofthezincoxide-zincmagnesiumoxidedoublebarriersystemAb...
A modeling of the optical properties of the zinc oxide-zinc magnesium oxide double barrier system
Abstract
We have modeled the optical properties of the ZnMgO/ZnO/ZnMgO system and correlated them to its transport properties by employing an effwctive mass equation method. By its constuction our method was sensitive to the barrier thickness of the system. From our results we deduce that there are more states in the well than resonant tuneling peaks in the transprot date. The “missing”states in the eletrical characteristics are not seen because of their much lower loalization in the well. However these states are responsible for the UV activity of the system. Reducing the barrier thickness changes dramatically the localization of the states in the well without affecting significantly the energy levels. Hence the electrical properties can be changed without changing signficantly the optical properties.
1. Introduction
The optical activity of ZnO based quantum wells in the UV range has recently been demonstrated[1-3]. In particular,Krishnamoorthy er al.[3] havefabricated 6 and 8 nm quantum wells within two 7 nm Zn0.8.Mg0.2O barriers (see Fig.1) and have demonstrated both resonant tunneling behavior and emission at 345.55 nm for the 6nm well and 348.22nm for the 8nm well. The observation of resonant tunneling behavior for the first time in this system demonstrated the high potentical of the ZnO system for device decelopment and showed the need for more accurte models predicting the properties and energy levels inside the wells of such multilayered system. It is worth pointing out that for stoichiometic compositions of Mg less than 0.2 the Mg atoms occupy the cation sublattice only, thus allowing the formation of clean hetero-interfaces at the walls of the quantum well.
The modeling of the optical proties of such wells is usually performed by a variety of methods starting from a simple model of an isolated well of finite depth and of infinite barrier wudth[4] up to sophisticated ab initio mothods which take accout of the particular eletronic structure of the interface materials [5-8].However, the particular structure examined here[3],shewed both optical activity and resonant tunneling bahavior and for sccurate prediction of the levels in the central well,the spread of the wavefunction not only in the higher band gap material, i.e. Zn0.8.Mg0.2O, but also in the layer next to it, i.e. the 200nm ZnO layer, must be taken into account. Therefore it is important in any modeling of this system to take account of the finite barrier width surrounding the well. This becomes even more important when we will later correlate qualitatively the ruselts of our calculations for the optical properties with the measured tranport properties of the system 展开
Abstract
We have modeled the optical properties of the ZnMgO/ZnO/ZnMgO system and correlated them to its transport properties by employing an effwctive mass equation method. By its constuction our method was sensitive to the barrier thickness of the system. From our results we deduce that there are more states in the well than resonant tuneling peaks in the transprot date. The “missing”states in the eletrical characteristics are not seen because of their much lower loalization in the well. However these states are responsible for the UV activity of the system. Reducing the barrier thickness changes dramatically the localization of the states in the well without affecting significantly the energy levels. Hence the electrical properties can be changed without changing signficantly the optical properties.
1. Introduction
The optical activity of ZnO based quantum wells in the UV range has recently been demonstrated[1-3]. In particular,Krishnamoorthy er al.[3] havefabricated 6 and 8 nm quantum wells within two 7 nm Zn0.8.Mg0.2O barriers (see Fig.1) and have demonstrated both resonant tunneling behavior and emission at 345.55 nm for the 6nm well and 348.22nm for the 8nm well. The observation of resonant tunneling behavior for the first time in this system demonstrated the high potentical of the ZnO system for device decelopment and showed the need for more accurte models predicting the properties and energy levels inside the wells of such multilayered system. It is worth pointing out that for stoichiometic compositions of Mg less than 0.2 the Mg atoms occupy the cation sublattice only, thus allowing the formation of clean hetero-interfaces at the walls of the quantum well.
The modeling of the optical proties of such wells is usually performed by a variety of methods starting from a simple model of an isolated well of finite depth and of infinite barrier wudth[4] up to sophisticated ab initio mothods which take accout of the particular eletronic structure of the interface materials [5-8].However, the particular structure examined here[3],shewed both optical activity and resonant tunneling bahavior and for sccurate prediction of the levels in the central well,the spread of the wavefunction not only in the higher band gap material, i.e. Zn0.8.Mg0.2O, but also in the layer next to it, i.e. the 200nm ZnO layer, must be taken into account. Therefore it is important in any modeling of this system to take account of the finite barrier width surrounding the well. This becomes even more important when we will later correlate qualitatively the ruselts of our calculations for the optical properties with the measured tranport properties of the system 展开
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一个造型的光学性质的氧化锌锌氧化镁双重屏障系统摘要仿照的 光学性质的ZnMgO/锌/ZnMgO他们的运输系统和相关的物业雇用effwctive大规模方程法. 其施工方法是敏感垒厚度制度. 从我们的结果,我们推断,还有更多的国家和比单模嘹亮的春运高峰 日期. "失踪"的国家,在电气特性并不因为他们看到了好loalization低得多. 但是这些国家负责制紫外活性. 厚度变化急剧减少壁垒本地化的国家在能源及影响层面很大. 因此可以改变电气性能的光学特性显著改变. 1. 引言量子光学活性氧化锌基紫外水井距离最近的表现[1-3]. 尤其krishnamoorthy呃基地. [3]havefabricated6和827nm的纳米量子阱zn0.8.mg0.2o障碍(见图1)、 共振隧行为和表现都排在纳米为345.55和348.22nm为粒子层好 . 观察共振隧行为进行了首次展示了本系统的高电位氧化锌 Decelopment显示装置系统需要更多的性能和藏型预测模型能级内 这些井多制. 值得指出的成分当量低于0.2毫克镁原子占据阳离子 仅子,让干净的形成异质介面在墙上的量子阱. 建模光学proties水井通常这类表演起了多种形式 好一个孤立的简单模式和深度有限无限垒wudth[4]方法的从头到尖端 其中尤其以账务的电子结构界面材料[5-8]. 但是 审核那堵墙[3]这里,无论shewed光学活性及共振隧sccurate和行为的预测水平 中央好,不仅传播了波高带宽的物质,即zn0.8.mg0.2o, 而且在它旁边层,即200nm的氧化锌层,必须予以考虑. 因此有必要在任何造型这一制度考虑有限垒宽度环绕 . 尤为重要的当我们稍后相关ruselts定性的计算光学特性 运输与性能测试系统
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