Question

帮翻译一下这段微电子学专业英语，谢谢。好的话加分。

Because it depends on some process characteristics,it is difficult to predict accurately the threshold votage of a MOSFET.In practice,the threshold voltage is measured for a sample device produced in a particular fabrication process.
The threshold voltage can be measured by comparing the experimental current-voltage characteristics with those predicted by theory.We begin above threshold but below saturation,the drain current has the form(公式略）where,from Equation(6.27)(公式略)Equation(7.1)is a model including the effect of the transverse field and longitudinal field(in velocity saturation).For Vds small enough that the saturation velocity can be neglected and Equation(7.1)can be approximated(公式略)

Answer 1

由于还受某些生产工艺特性的影响，因此MOSFET的门限电压是难于（在量产前）准确预估的。实践中一般都会固化特定的制造工艺，并从量产产品中选取样品进行测量后得到MOSFET的门限电压。

门限电压的测量方法是将样品测得的伏安特性曲线与理论计算值进行比较。首先按照公式6,27，在门限上方未饱和段的漏极电流符合公式（公式略）。公式7.1所建立的模型已包含了横向段及纵向段的效应（即加速饱和）。当Vds足够小时，可忽略饱和加速度，于是公式7.1可近似处理为（公式略）。

Answer 2

Because it depends on some process characteristics,it is difficult to predict accurately the threshold votage of a MOSFET.
因为它取决于一些工艺特点,很难准确预测阈值电压的场效应晶体管。

In practice,the threshold voltage is measured for a sample device produced in a particular fabrication process.
在实际中,阈值电压的测量装置产生一个样本为在一个特定的制造过程。

The threshold voltage can be measured by comparing the experimental current-voltage characteristics with those predicted by theory.
门槛电压测量可以通过对比实验伏安特性与理论所预测的。

We begin above threshold but below saturation,the drain current has the form(公式略）where,from Equation(6.27)(公式略)Equation(7.1)is a model including the effect of the transverse field and longitudinal field(in velocity saturation).
我们开始上面阈值,但低于饱和度、漏极电流具有形式(公式略)到哪里,从方程(6.27)(公式略)方程(7.1)是一个模型,其中包括效果的横向场和纵向电场(速度饱和)。

For Vds small enough that the saturation velocity can be neglected and Equation(7.1)can be approximated(公式略)
Vds的小到可以忽略饱和速度方程(7.1),可以将其近似(公式略)