Question

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Since the inception of the Internet, the communication market segment has seen an explosive growth. There is an increasing demand for bandwidth over the network due to a rapid increase in the number of users as well as the need for video/data communication. Such requirements have put stringent demands on the semiconductor technologies for providing adequate performance at reasonable cost. SiGe BiCMOS
technology provides a very elegant solution to address these market needs, for various reasons: 1) high-speed heterojunction bipolar transistors (HBTs) provide fT,fMAX linearity (IP3),and noise figure（NFmin） comparable with more exotic HBTs like GaAs and InP；2) multiple variants of HBTs that are doped selectively to provide varying breakdown voltage requirements can be seamlessly integrated with state-of-the-art CMOS and high-quality passives；and 3) this technology provides higher yields and lower cost compared with other viable technologyoptions. It is not surprising, therefore, that the estimated worldwide SiGe market growth will exceed $1.0 billion by 2004.
IBM’s SiGe BiCMOS is now in its fourth lithographic generation since the introduction of the 0.5-μm generation into volume production. The key component of the device offering is the SiGe-based HBT whose performance（fT,fMAX） has been significantly improved to over 200 GHz in the 0.13-μm generation (see Fig.1). Wireless and storage applications continue to leverage the 0.5- and 0.25-μm generations where cost and time-to-market drive the technology choices. In contrast,
network communication space leads the 0.18- and 0.13-μm product applications where VLSI chips need substantial CMOS integration along with the high-performance SiGe HBT.
This paper reports IBM’s recent SiGe BiCMOS technology enhancements, such as high-speed HBT development, HBT modifications to address power amplifier (PA) application as well as low-cost wireless solutions, and high-performance passive element integration. Furthermore, we cover some key products and applications that these technologies have addressed. Finally, some insight is provided into the future
directions of SiGe BiCMOS technologies for addressing a myriad of applications.
偶会加分的

Answer 1

成立以来，互联网，通信市场出现了爆炸性增长。有越来越多的要求，带宽的网络，由于迅速增加的用户数量以及需要视频/数据通信。这些要求已严格的要求，半导体技术，提供足够的性能，合理的费用。硅锗BiCMOS工艺
技术提供了一个非常漂亮的解决办法来解决这些市场需求，因各种原因： 1 ）高速异质结双极晶体管（异质结双极晶体管）提供方呎， fMAX线性度（ IP3为）和噪声系数（ NFmin ）可比更喜欢异国情调的砷化镓异质结双极晶体管和磷化铟; 2 ）多个变种掺杂异质结双极晶体管的选择，提供不同的击穿电压要求可以无缝集成与国家最先进的CMOS和高品质的被动;和3 ）本技术提供更高的产量和更低的成本比较其他可行technologyoptions 。这并不奇怪，因此，估计全球SiGe半导体市场增长将超过10亿美元，到2004年。
IBM的硅锗BiCMOS工艺目前已进入第四个平版代以来引进0.5微米代投入量产。的关键部件的设备提供的是SiGe半导体为基础的异质结双极晶体管的性能（方呎， fMAX ）已经显着改善，以超过200千兆赫的0.13微米一代（参见图1 ） 。无线和存储应用中继续发挥的0.5和0.25 μm的后代在成本和上市时间驱动的技术选择。与此相反，
网络通信空间引领0.18微米和0.13微米产品的应用需要大量的超大规模集成电路芯片的CMOS集成随着高性能的硅锗晶体管。
本文报道， IBM最近SiGe BiCMOS技术的改进，如高速HBT的发展， HBT的修改，以解决功率放大器（ PA ）的应用，以及低成本的无线解决方案，以及高性能的无源元件集成。此外，我们还涉及到一些关键的产品和应用，这些技术已经解决。最后，一些有识之士提供未来
方向的SiGe BiCMOS工艺技术，解决了无数的应用。

Answer 2

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