Question

帮忙翻译一下这篇文章.谢谢~~

Electronic memory comes in a variety of forms to serve a variety of purposes. Flash memory is used for easy and fast information storage in such devices as digital cameras and home video game consoles.It is used more as a hard drive than as RAM.In fact,Flash memory is considered a solid state storage device.Solid state means that there are no moving parts-everything is electronic instead of mechanical.
Here are a few examples of Flash memory:
Your computer is BIOS chip
CompactFlash(most often found in digital cameras)
SmartMedia(most often found in digital cameras)
Memory Stick(most often found in digital cameras)
PCMCIA Type I and Type 2 memory cards (used as solid-state disks in laptops)
Memory cards for video game consoles
Flash memory is a type of EEPROM chip.It has a grid of columns and rows with a cell that has two transistors an each intersection.The two transistors are separated from each other by a thin oxide layer. One of the transistors is known as a floating gate, and the other one is the control gate.The floating gate is only link to the row,or wordline,is through the control gate.As long an this link is in place ,the cell has a value of 1.To change the value to a 0 requires a curious process called Fowler-Nordheim tunneling.
Tunneling is used to alter the placement of electrons in the floating gate.An electrical charge,usually 10 to 13 volts,is applied to the floating gate.The charge comes from the column,or bitline,enters the floating gate and drains to a ground.
This charge causes the floating-gate transistor to act like an electron gun.The excited electrons are pushed through and trapped on other side of the thin oxide layer,giving it a negative charge.These negatively charged electrons act as a barrier between the control gate and the floating gate.A special device called a cell sensor monitors the level of the charge passing through the floating gate.If the flow through the gate is greater than 50 percent of the charge,it has a value of 1.When the charge passing through drops below the 50-percent threshold,the value changes to 0.A blank EEPROM has all of the gates fully open,giving each cell a value of 1.
The electrons in the cells of a Flash-memory chip can be returned to normal ("1")by the application of an electric field,a higher-voltage charge.Flash memory uses incircuit wiring to apply the electric field either to the entire chip or to predetermined sections known as blocks.This erases the targeted area of the chip, which can then be rewritten.Flash memory works much faster than traditional EEPROMs because instead of erasing one byte at a time,it erases a block or the entire chip,and then rewrites it.

Answer 1

电子记忆进来各种各样的形式为各种各样的目的服务。 闪存为容易和快速的信息存储使用在这样设备象数字照相机和家庭录影游戏控制台。它使用更多作为一个硬盘比作为RAM。实际上，闪存被认为固体存贮设备。固态意味着没有移动部分一切是电子的而不是机械。
这闪存的几个例子：
您的计算机是BIOS芯片
CompactFlash (经常发现在数字照相机)
SmartMedia (经常发现在数字照相机)
记忆棍子(经常发现在数字照相机)
PCMCIA类型I，并且第二类型存储卡(使用作为固体盘在膝上计算机)
存储卡为电子游戏控制台
闪存是EEPROM芯片的类型。它有专栏和列栅格与有二支晶体管一个每个交叉点的细胞。二支晶体管从彼此被分离由稀薄的氧化物层数。 其中一支晶体管知道，一个浮动门， 并且另一个是控制门。浮动门是仅链接到列，或wordline，是通过控制门。作为长期一个这个链接是到位，细胞有值为1。要改变价值到0要求叫的一个好奇过程捕野禽者Nordheim挖洞。
挖洞在浮动门用于修改电子的安置。电荷，通常10到13伏特，适用于浮动门。充电来自专栏，或bitline，进入浮动门并且排泄对地面。
这充电造成漂浮门晶体管行动象电子枪。激动的电子在稀薄的氧化物层数的其他边通过被推挤并且被困住，给它一个负电荷。这些消极地被充电的电子作为一个障碍在控制门和浮动门之间。一个特别设备称细胞传感器显示器穿过浮动门的充电的水平。如果流经门是充电的大于50%，它有值为1。当穿过下落的充电在50百分之门限之下，价值变动到0。空白的EEPROM有所有门充分地开放，给每个细胞值为1。
电子在闪光记忆芯片的细胞可以返回到法线(“1”)由一个电场的应用，高电压充电。闪存使用incircuit接线应用电场于整个芯片或于被预先决定的部分以块著名。这删掉芯片的目标区域， 哪些可能然后被重写。闪存快速地运作比传统EEPROMs，因为而不是每次删掉一个字节，它删掉块或整个芯片，然后重写它。