Question

翻译 请高手。。。。

(i) As expected, the strain fields predicted in the substrate but far away from the QWR were very similar for both models because the internal details of the wire composition are irrelevant to the far-field response. (ii) For points within or near to the QWR,the variation in predicted field strengths between the models can be as high as 10% for these materials and geometries. (iii) Although the singular behavior present near the sharp corners of the QWR looks similar in form for both models, the amplitudes of the singularity are significantly different in some cases.A more complete picture of the strain effects on quantum heterostructures is gained by extending the calculations to include any spontaneous and piezoelectric polarizations which will directly change the local electrostatic potential. So far, the differences present in the induced polarization electric fields as obtained by both the homogeneous inclusion and structural inhomogeneity models has not been reported in the literature, which is the main motivation of this study. In this paper we therefore develop a simple BEM formulation to investigate the elastic and electric fields present in QWR semiconductor structures.Our BEM algorithm is based on constant-element discretization with analytical kernel function integration.The corresponding BEM routine is then applied to systems composed of InAs QWRs in (001)- and (111)-orientated GaAs and of InN QWRs in (0001)- and (1000)-oriented wurtzite AlN ((1000) means along the polar direction, i.e., a direction normal to the (0001)-axis). The QWRs considered are polygonal and the formalism is sufficiently general to include the possibility of irregular shapes. While our BEM program includes the simple homogeneous inclusion as a limiting case, the Eshelby inclusion solution
developed before [12] is also applied to check the accuracy of our BEM program. Though the elastic strain features from both the inclusion and inhomogeneity models are consistent with previous reports [11, 12], we will show that the induced electric fields can be very different. The main conclusion is that the inhomogeneous material properties need to be taken into account to reliably predict the induced electric fields in strained QWRs.This paper is organized as follows. In Section 2, we describe the problem to be solved, along with the associated basic equations. In Section 3, the BEM and the corresponding constant-element discretization is presented. Then in Sections 4 and 5 we present various numerical examples and draw conclusions.

Answer 1

（一）正如所料，应变场预测，在衬底上，但远从qwr十分相似，为两种型号，因为内部的细节钢丝组成，是风马牛不相及的远场响应。 （二）为点内或附近向qwr ，变异预测场强之间的模型可高达10 ％ ，为这些材料和几何形状。 （三）虽然奇异行为，目前附近的急弯时的qwr酷似形式为两种型号，振幅的奇异性有明显差异，在一些cases.a更加全面地了解应变的影响，对量子异质结构得到延长计算包括任何自发性和压电极化这将直接改变当地的静电势。截至目前为止，目前的分歧，在激电场作为所得都均匀包容性和结构性的不均匀性模型，并没有文献报告中，这是主要动机是这项研究。在这篇文章中我们因此制定一个简单的边界元法的制定，调查弹性和电场，目前在qwr半导体structures.our边界元算法是基于恒元离散与解析核函数integration.the相应的边界元法进行例行然后应用于系统组成的InAs qwrs在（ 001 ） -和（ 1 11）为主的砷化镓和客栈q wrs（ 0 001） - （1 0 00）面向纤锌矿氮化铝（ （ 1 0 00）指沿极性方向，即一个方向，以正常（0 0 01 ）轴） 。该qwrs考虑的是多边形和形式主义是充分概括地包括可能的不规则形状。而我们的边界元法程序，包括简单的同质列为限制情况下，列入的Eshelby解
发达前[ 12 ] ，也适用于检查的准确性，我们的边界元法程序。虽然弹性应变功能，无论从包容性和不均匀性的模式是一致的，与以前的报告中[ 11 ， 12 ] ，我们会表明，该电场可有很大差异。主要结论是不均匀的材料性能，必须考虑到能够可靠地预测电场在紧张qwrs.this文件，是有组织如下。在第2条中，我们描述要解决的问题，再加上相关的基本方程。在第3条中，边界元法和相应的常数元离散。那么，在第4和第5 ，我们目前的各项数值例子，并从中得出结论。